Additive manufacturing systems and methods for magnetic materials

ABSTRACT

Techniques are disclosed for systems and methods to provide a magnetic materials additive manufacturing system (MMAMS) configured to form compact magnetic structures and/or devices. A MMAMS includes a controller and one or more dispensers configured to dispense magnetic material matrix in a high resolution pattern in order to form the compact magnetic structures and/or devices. The MMAMS receives a magnetic device design including a magnetic structure to be formed from a magnetic material matrix, where the magnetic material matrix is configured to be used in the MMAMS. The MMAMS receives magnetic material matrix and dispenses the magnetic material matrix to form the magnetic structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application is related to patent application Ser. No.______, filed Aug. 20, 2015 [filed concurrently herewith; AttorneyDocket No. 70186.279US01] and entitled “Ferrite Composite Sleeve Systemsand Methods for Coaxial Applications,” which is hereby incorporated byreference in its entirety.

TECHNICAL FIELD

The present invention relates generally to additive manufacturing and,more particularly, to systems and methods for additive manufacture usingmagnetic materials.

BACKGROUND

Magnetic materials are used to form a wide array of electrical devices,such as motors, transformers, sensors, and/or other electronic devices.Contemporary devices are often miniaturized in order to form smaller orthinner devices, or, in the context of mobile applications, to reduceweight, reduce power, and/or otherwise add more functionality within asmaller footprint. Existing methods for forming relatively smallmagnetic devices typically include lithographic patterning or embossingusing photoresist composites, mechanical polishing/placement, orelectroplating.

Conventional electroforming can be used to plate metallic magneticmaterials into lithographically patterned surfaces, and while theresolution of electroforming can be as low as 10's of nanometers, thetechnique cannot be used with substantially non-conductive ceramicpermanent magnets or ferrite materials. Conventional lithography andembossing processes are also conventionally available, but theseprocesses are limited in minimum resolution to approximately 40-60 umand require relatively complex multi-layer growth processes to producethe 2.5 dimensional shapes typical of lithographic processing. Thus,there is a need for an improved methodology to provide compact magneticdevices that is relatively inexpensive, takes less time, and is lesscomplex.

SUMMARY

Techniques are disclosed for systems and methods to provide a magneticmaterials additive manufacturing system configured to form compactmagnetic structures and/or devices. A magnetic materials additivemanufacturing system (MMAMS) may include a controller and one or moredispensers configured to dispense magnetic material matrix in a highresolution pattern in order to form the compact magnetic structuresand/or devices. The MMAMS may be integrated with other AMSs and/or otherfabrication systems and/or subsystems to form complex and compactelectronic devices incorporating magnetic structures and/or devices,relatively quickly and inexpensively, as compared to conventionalmethods.

In one embodiment, a method may include receiving a magnetic devicedesign including a magnetic structure to be formed from a magneticmaterial matrix, wherein the magnetic material matrix is configured tobe used in a magnetic materials additive manufacturing system (MMAMS);receiving the magnetic material matrix by the MMAMS; and dispensing themagnetic material matrix using the MMAMS to form the magnetic structure.

In another embodiment, a system may include a transmission line coupledbetween a signal source and a signal sink, wherein the transmission lineincludes a center conductor separated from an outer conductor by atleast one dielectric; the at least one dielectric includes a ferritematrix dispensed by an MMAMS; and at least one of the center conductorand the outer conductor include a ferromagnetic matrix dispensed by theMMAMS and configured to provide a poling field to the ferrite matrix tomodify an electromagnetic propagation characteristic of anelectromagnetic wave while it propagates between the signal source andthe signal sink.

In a further embodiment, a method may include receiving a signal of asignal source by a transmission line; propagating the signal between thesignal source and a signal sink; and providing the signal to the signalsink by the transmission line, wherein the transmission line includes acenter conductor separated from an outer conductor by at least onedielectric; the at least one dielectric includes a ferrite matrixdispensed by a magnetic materials additive manufacturing system (MMAMS);and the transmission line includes a ferromagnetic matrix dispensed bythe MMAMS and configured to provide a poling field to the ferrite matrixto modify an electromagnetic propagation characteristic of the signalwhile it propagates between the signal source and the signal sink.

The scope of the invention is defined by the claims, which areincorporated into this section by reference. A more completeunderstanding of embodiments of the invention will be afforded to thoseskilled in the art, as well as a realization of additional advantagesthereof, by a consideration of the following detailed description of oneor more embodiments. Reference will be made to the appended sheets ofdrawings that will first be described briefly.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a block diagram of a magnetic materials additivemanufacturing system in accordance with an embodiment of the disclosure.

FIG. 2 illustrates a block diagram of a fabrication system including amagnetic materials additive manufacturing system in accordance with anembodiment of the disclosure.

FIGS. 3A-K illustrate various fabrication stages of a magnetic deviceand/or structure in accordance with an embodiment of the disclosure.

FIGS. 4A-F illustrate various magnetic devices and/or structures formedin accordance with an embodiment of the disclosure.

FIG. 5A illustrates diagrams of various shapes for a magnetic deviceand/or structure in accordance with an embodiment of the disclosure.

FIG. 5B illustrates a magnetic device and/or structure implemented in anelectronic device in accordance with an embodiment of the disclosure.

FIG. 6 illustrates a flow diagram of various operations to form amagnetic device and/or structure using a magnetic materials additivemanufacturing system in accordance with an embodiment of the disclosure.

FIG. 7 illustrates a flow diagram of various operations to use amagnetic device and/or structure in accordance with an embodiment of thedisclosure.

Embodiments of the present disclosure and their advantages are bestunderstood by referring to the detailed description that follows. Itshould be appreciated that like reference numerals are used to identifylike devices illustrated in one or more of the figures.

DETAILED DESCRIPTION

In accordance with one or more embodiments of the present disclosure, amethod for forming compact magnetic structures and/or devices includesusing an additive manufacturing process to dispense magnetic materialmatrix in a high resolution pattern in order to form the compactmagnetic structures and/or devices. In various embodiments, a magneticmaterials additive manufacturing system (MMAMS) may include a controllerand one or more dispensers (e.g., extruder nozzles, liquid dispensers,wire dispensers, and/or other magnetic material dispensers) configuredto form a patterned magnetic structure and/or device on a build support.The MMAMS may be integrated with other AMSs and/or other fabricationsystems and/or subsystems to form complex and compact electronic devicesincorporating magnetic structures and/or devices, relatively quickly andinexpensively, as compared to conventional methods.

In various embodiments, the described technique directly writes magneticmaterials into complex three dimensional shapes with design resolutionsof approximately 10 um. The magnetic material may be placed (usingelectronic control) into desired one, two, or three dimensional patternsin minutes. In various embodiments, three dimensional shapes can bepatterned by dispensing a highly viscous polymer and curing in placeusing heat, light, and/or other catalyst as it is printed, additiveforming of pre-solidified magnetic composite filament (e.g., NdFeB mixedwith a polymer) in free space, additively forming a nonmagnetic materialalongside the magnetic material for mechanical support, and/or usingother additive manufacturing techniques. The nonmagnetic material can beretained or dissolved away after the magnetic material is cured ordried. The result is a highly precise magnetic field pattern placedinside a polymer structure. Various portions of polymer within theoverall device may include the magnetic material or may not include themagnetic material. Typically, the magnetic material will be only a smallfraction of the total volume of the overall device, but the fieldgenerated by the incorporated magnetic material can be focused preciselyonto the volumetric space required to drive an electromechanical, radiofrequency, terahertz, or optical device. In cases where a liquiddispenser is used, limited heating may be applied, allowing the materialto be isotropically magnetized prior to patterning. This means that onecan create very complex magnetic shapes that may not otherwise bepossible using lithographic patterning or embossing. Finished componentscan be magnetized using a conventional large area magnetizing tool ormagnetic field generator, as described herein.

FIG. 1 illustrates a block diagram 100 of a magnetic materials additivemanufacturing system (MMAMS) 110 in accordance with an embodiment of thedisclosure. As shown in FIG. 1, MMAMS 110 includes a controller 112, adispenser 114 configured to receive magnetic material matrix 117 from asupplier 115, and a build support 116. In various embodiments,controller 112 may be configured to control the various elements ofsystem 110 to form one or more magnetic structures from magneticmaterial matrix 117 using an additive manufacturing processcorresponding to MMAMS 110. For example, in embodiments where MMAMS 110is implemented as a fused filament fabrication additive manufacturingsystem (FFFAMS), controller 112 may be configured to receive a designfor a magnetic device (e.g., in the form of an electronic data fileprovided by an external logic device, such as a computer and/or memorydevice) and to dispense magnetic material matrix 117 (e.g., in the formof magnetic particle impregnated acrylonitrile butadiene styrene (ABS),polycarbonate (PC), polylactic acid (PLA), high density polyethylene(HDPE), PC/ABS, polyphenylsulfone (PPSU), high impact polystyrene(HIPS), and/or other polymer filament provided by supplier 115) to forma magnetic structure of the magnetic device from magnetic materialmatrix 117 using dispenser 114.

More generally, MMAMS may be implemented as an FFF AMS, astereolithographic AMS (e.g., which may be configured to form solidmagnetic structures from magnetic particle impregnated liquids usingphotopolymerization and/or other types of liquid curing processes), awire or particle fusing AMS (e.g., which may be configured to formmagnetic structures from magnetic wires and/or granules fused to oneanother using a laser, electron-beam, and/or other types of melting,sintering, and/or fusing device), and/or other types of AMSs that can beconfigured to form magnetic structures from magnetic material matrix 117(e.g., magnetic particle impregnated filaments and/or liquids, magneticgranules or particles, and/or other magnetic material matrixes). In someembodiments, different types of AMSs, such as FFF and stereolithographicAMSs, may be combined into a single MMAMS that can be configured to formmagnetic structures utilizing multiple different types of additivemanufacturing processes.

Controller 112 may be implemented with any appropriate logic device(e.g., processing device, microcontroller, processor, applicationspecific integrated circuit (ASIC), field programmable gate array(FPGA), memory storage device, memory reader, or other device orcombinations of devices) or distributed combination of logic devicesthat may be adapted to execute, store, receive, and/or provideappropriate instructions, such as software instructions implementing amethod and/or control loop for forming a magnetic structure, forexample, using one or more elements of MMAMS 110. In addition,controller 112 may be implemented with one or more machine readablemediums configured to store non-transitory instructions and/or datafiles, such as design data files, for loading into and/or execution bycontroller 112. Such machine readable mediums may be internal, external,and/or otherwise configured to interface with controller 112. In theseand other embodiments, the logic devices may be implemented with othercomponents where appropriate, such as volatile memory, non-volatilememory, and/or one or more interfaces (e.g., inter-integrated circuit(I2C) interfaces, mobile industry processor interfaces (MIPI), jointtest action group (JTAG) interfaces (e.g., IEEE 1149.1 standard testaccess port and boundary-scan architecture), various types of universalserial bus (USB), and/or other interfaces).

Dispenser 114 may be implemented as an actuated or substantiallystationary filament extrusion nozzle, liquid dispenser nozzle, printhead, wire and/or granule placement device, and/or any other type ofdispenser configured to receive magnetic material matrix 117 fromsupplier 115 and dispense magnetic material matrix 117 in a pattern,layer, or bulk liquid configured to form at least a portion of amagnetic structure supported by build support 116. For example, inembodiments where MMAMS 110 is at least partially implemented as an FFFAMS, dispenser 114 may include an actuated (e.g., using one or morestepper motors, for example) filament extrusion nozzle configured toreceive magnetic matrix filament from a reel or spool of supplier 115and heat, soften, and/or melt the magnetic matrix filament (e.g., usinga heater integrated with dispenser 114) as it dispenses the magneticmatrix filament in one or more patterned layers to form a magneticstructure on build support 116.

In embodiments where MMAMS 110 is at least partially implemented as astereolithographic AMS, dispenser 114 may include an actuated liquiddispenser nozzle configured to receive magnetic matrix liquid from areservoir of supplier 115 and dispense the magnetic matrix liquid in oneor more patterned layers to form a magnetic structure, for example, ordispense the magnetic matrix liquid into a pre-formed (e.g., using adifferent dispenser and/or AMS, and/or other types of fabricationsystems) mould. In one or more embodiments, a nozzle of dispenser 114may be implemented with substantially nonmagnetic materials, forexample, to help reduce a risk of accumulation of magnetic materialand/or blockage within dispenser 114. In some embodiments, the liquiddispenser nozzle may be implemented with a heater to help adjust aviscosity/flow rate of magnetic material matrix 117, for example, and/orto help adjust a magnetization of magnetic material matrix 117 as it isdispensed. In other embodiments, dispenser 114 may be configured todispense bulk magnetic matrix liquid into a build reservoir of buildsupport 116, for example, and one or more lasers and/or other curingdevices (e.g., other modules 118) may be used to cure patterned layersof the bulk magnetic matrix liquid on build support 116 to form amagnetic structure.

In various embodiments, magnetic matrix filament, magnetic matrixliquid, and/or other magnetic material matrixes 117 may be cured afterbeing dispensed by dispenser 114 by allowing the matrix to cool, byapplying a catalyst such as heat, a chemical, a type of electromagneticradiation (e.g., light), and/or other type of catalyst, and/or byapplying other types of curing processes. In embodiments where MMAMS 110is at least partially implemented as a wire or particle fusing AMS,dispenser 114 may include an actuated wire or particle dispenser nozzleconfigured to receive magnetic wire or magnetic particles from supplier115 and dispense the wire or particles in one or more patterned layers,which may then be melted, sintered, or otherwise fused to each otherand/or prior-formed layers to form a magnetic structure. Such fusing maybe performed using a laser, an electron beam, and/or other type offusing device (e.g., other modules 118).

Build support 116 may be implemented as a mechanically actuatedplatform, such as for an FFF AMS, for example, or may be implemented asa mechanically actuated reservoir and/or platform, where the reservoirmay be configured to contain bulk liquid magnetic matrix, and where theplatform and/or reservoir may be configured to separate to lift amagnetic structure out from the reservoir as the magnetic structure isformed coupled to the platform. In some embodiments, build support 116may be actuated so as to move relative to dispenser 114 to facilitateformation of a magnetic structure. In one embodiment, dispenser 114 maybe substantially stationary throughout a manufacturing process, forexample, and build support 116 may be configured to move and/or rotaterelative to dispenser 114 to help form a magnetic structure. Buildsupport 116 may also be implemented with one or more features configuredto facilitate a type of additive manufacturing process, such as aplatform temperature controller (e.g., a heater or cooler) or a deviceor vacuum chuck (e.g., configured to help keep a partially or completelyformed magnetic structure or device stationary relative to build support116 during formation).

In various embodiments, other modules 118 may include one or moredevices configured to facilitate a type of additive manufacturingprocess performed by MMAMS 110. For example, other modules 118 mayinclude a curing, melting, sintering, or fusing laser and/or electronbeam device, a pattern projector, a temperature sensor (e.g., configuredto monitor a temperature of dispenser 114, build support 116, an ambienttemperature of MMAMS 110, and/or other process temperatures associatedwith operation of MMAMS 110), a magnetic field generator, ademagnetizer, a device or vacuum chuck (e.g., on which to mount or forma magnetic structure, a magnetic device, a mould, and/or otherstructure), a transport mechanism (e.g., configured to mechanicallytransport a magnetic structure, build support 116, and/or a device orvacuum chuck to and from MMAMS 110), an alignment sensor (e.g.,configured to sense a position of dispenser 114, build support 116,and/or portions of a magnetic structure or device supported by buildsupport 116), one or more actuators configured to position elements ofMMAMS 110 (e.g., including elements of other modules 118), one or moreheaters (e.g., to adjust a temperature of dispenser 114, build support116, an ambient temperature of MMAMS 110, and/or other elements of MMAMS110), and/or other devices.

In some embodiments, various devices of other modules 118 may beintegrated with other elements of MMAMS 110 to help facilitate forming amagnetic structure and/or device. For example, a heater and/ortemperature sensor of other modules 118 may be integrated with dispenser114 and/or build support 116 and/or coupled to controller 112 to helpcontrol or maintain a particular temperature at dispenser 114 and/orbuild support 116. In other embodiments, a heater, a magnetic fieldgenerator (e.g., an adjustable current supply coupled to a Helmholtzcoil or other electromagnet coil configuration, with or without anadjustable orientation relative to build support 116), a demagnetizer(e.g., a magnetic field generator with an adjustable alternating currentsupply), and/or other magnetism adjustment device may be integrated withdispenser 114 and/or build support 116 to help adjust a magneticproperty of a magnetic structure formed by MMAMS 110. Such magneticadjustment devices may be configured to make such adjustments in siturelative to the additive manufacturing process performed by MMAMS 110,for example, or ex situ, such that magnetic adjustment would take placeat intermediate steps in or after completion of the formation of amagnetic structure.

In one embodiment, dispenser 114, build support 116, and/or otherelements of MMAMS 110 may be implemented with a magnetic field generatorconfigured to guide magnetic particles and/or powder (e.g., in bulk orwithin a liquid) to a particular position on build support 116, such aswithin a preformed mould. In general, MMAMS 110 may be implemented withmultiple dispensers 114 and/or suppliers 115 to allow formation ofmagnetic structures and/or devices using multiple types of materials,including magnetic material matrixes 117 and/or nonmagnetic materials(e.g., used to form nonmagnetic structure, such as mechanical supportsand/or moulds, for a magnetic device).

Various embodiments of MMAMS 110 may be used to form magnetic structureswith reliable dimension resolutions of approximately 10 to 20 um. Forexample, where MMAMS 110 is at least partially implemented as an FFF AMSand/or a stereolithographic AMS, utilizing a magnetic particleimpregnated polymer liquid and/or filament, MMAMS 110 may be configuredto form one or more magnetic structures with dimension resolutions assmall as approximately 10 or 20 um, for example, while maintainingapproximately 50% of the magnetic properties/effects of bulk (e.g.,machined and/or shaped) magnetic counterparts.

Thus, embodiments of MMAMS 110 may be configured to form magneticstructures configured for mechanical, electrical, and/or radio frequencyapplications in extremely compact spaces, relative to conventionalmethods. Moreover, due in part to the resolution attainable byembodiments of MMAMS 110 and/or the spatial flexibility offered byadditive manufacturing using magnetic material matrixes, as opposed toconventional machining, lapping, photolithography, or other conventionalshaping of magnetic structures, magnetic structures formed usingembodiments described herein may be configured to generate extremelycomplex and compact three dimensional magnetic fields and/or gradients.

FIG. 2 illustrates a block diagram 200 of a fabrication system 220including MMAMS 110 in accordance with an embodiment of the disclosure.For example, fabrication system 220 may be configured to use multipledifferent types of fabrication processes to help form a monolithicdevice integrated with one or more magnetic structures and/or devicesformed by MMAMS 110. As shown in FIG. 2, fabrication system 120 mayinclude electroformation system 224, deposition system 226, immersionsystem 228, and one or more other subsystems 230, each able to helpprocess a magnetic device and/or structure formed, at least in part, byMMAMS 110. In various embodiments, a magnetic device and/or otherstructure in various stages of manufacture may be conveyed betweenelements of fabrication system 220 by transport 222, which may beimplemented as a device or vacuum chuck conveyance system, for example,and/or other transport configured to retrieve a magnetic device and/orother structure from any element of fabrication system 220 and deliverthe device or structure to another element of fabrication system 220. Insome embodiments, transport 222 may be implemented, at least in part, bya user conveying a device or structure between elements of fabricationsystem 220. Operation of transport 222 and/or other elements offabrication system 220 may be controlled and/or otherwise facilitated bycontroller 212, which may be implemented as one or more monolithic ordistributed logic devices similar to controller 112 of FIG. 1, forexample, that may be configured to communicate with any element offabrication system 120 to operate fabrication system 220.

In the embodiment shown in FIG. 2, fabrication system 220 includespreparation system 211, which may be configured to prepare magneticmaterial matrix for use with MMAMS 110 and/or to deliver magneticmaterial matrix to MMAMS 110 (e.g., to supplier 115 of MMAMS 110, asshown in FIG. 1). In some embodiments, preparation system 211 may beconfigured to mix a magnetic powder with a liquid polymer resin toprovide a bulk liquid magnetic matrix. Preparation system 211 may beconfigured to provide that bulk liquid magnetic matrix directly to MMAMS110, for example, or to solidify/cure the liquid magnetic matrix to formbulk solid magnetic matrix and then form/extrude it into filament, wire,and/or laminate, which can be provided to MMAMS 110 as a base magneticmaterial matrix from which to form a magnetic structure using acorresponding type of additive manufacturing process, as describedherein. In other embodiments, preparation system 211 may be configuredto extrude and/or spool a magnetic wire (e.g., from bulk magneticmaterial and/or wire), or to package magnetic granules, particles,and/or powder, for example, to provide magnetic material matrix to MMAMS110 that is suitable for fusing.

Possible ingredients for a magnetic material matrix include, withoutlimitation, various types and/or arrangements of ferromagnetic and/orferrimagnetic materials, hard and/or soft magnetic materials, bulkferrite or ferromagnetic materials, ferrite and/or ferromagnetic powders(e.g., with grain sizes between approximately 0.8 to 6 um),nonconductive ceramic magnetic materials, Barium Hexaferrite(BaFe12O19), various other hexagonal ferrites, Neodymium (Nd2Fe14B)permanent magnets, soft nickel-iron alloy (NiFe), various otherpermanent magnet materials, SU8 photoresist, other photoresist polymers,ABS, PC, PLA, HDPE, ultra HDPE, PC/ABS, PPSU, HIPS, thermoplasticpolymers, light sensitive stereolithography photo-resin, and/or otherliquid and/or melt-able polymers. When mixing powders and polymers,mixing can commence at various mass ratios, such as 1:1, 3:1, and/oracross the range of 0.5:1 to more than 5:1 (e.g., mass of powder: massof polymer). Also, some magnetic material matrix may include a chemicaladditive to reduce differences in the interfacial surface energy ofconstituent materials. For example, in one embodiment, a relativelysmall amount (e.g., 5 mL of additive per L of polymer/resist) of ethylacetate and 1-cyano-ethyl-2theyl-4 methylimidazole may be added to SU8when mixing with Barium Hexaferrite powder to help ensure relativelyhomogenous mixing. In various embodiments, mixing may be performed by anonmagnetic stirring device.

As is known in the art, ferromagnetic materials may be characterized asincluding aligned magnetic domains that produce relatively strong netmagnetic fields, whereas ferrimagnetic materials may be characterized asincluding opposed magnetic domains, as with antiferromagnetic materials,but with an anisotropy in the moments of the opposing magnetic domainssuch that a net or aggregate magnetic moment remains. The net magneticmoment can be selectively aligned relative to a propagatingelectromagnetic field (e.g., using an externally applied magneticpolling field, which may be provided by a ferromagnetic material forexample) to modify various propagation characteristics of thepropagating electromagnetic field, as described more fully herein.

Electroformation system 224 may be implemented as any electrodeposition,electroplating, and/or other type of electroforming system that can beconfigured to form a metal layer of a selectable thickness on aconductive surface, such as a patterned conductive surface. For example,electroformation system 224 may be configured to form a layer of anelectroformable metal that is one micrometer thick or thicker over anyexposed conductive surface of a partially formed magnetic structureand/or device, and/or to form a relatively thick substrate on which toform a magnetic structure and/or device. In various embodiments, theexposed conductive surface may be selective exposed by anelectroformation mask, such as patterned photoresist. Deposition system226 may be implemented as any sputter deposition system and/or othertype of film deposition system that can be configured to form apatterned material layer of a selectable thickness on a substrate. Forexample, using a deposition mask, deposition system 226 may beconfigured to form a layer of a metal material that is less than onemicrometer thick or thicker, such as a metal seed layer, over a portionof a partially formed magnetic structure and/or device that is exposedby the deposition mask. Such exposed portions may include conductiveand/or nonconductive surfaces.

Immersion system 228 may be implemented as any etching, cleaning,filling, and/or other type of chemical immersion system that can beconfigured to partially or completely immerse and/or spray an object tochemically etch, clean, dissolve, fill, or otherwise process the object.For example, immersion system 228 may be configured to dissolvenonmagnetic polymer or resin and/or other nonmagnetic structure within apartially formed magnetic structure and/or device to remove unwantedportions (e.g., fabrication supports or moulds, for example) of thepartially formed magnetic structure or device. In some embodiments,immersion system 228 may be configured to immerse a partially formedmagnetic structure or device to fill one or more cavities within themagnetic structure or device with a particular type of material, such asa dielectric material, for example, or other magnetic or nonmagneticmaterial in solution form, which can then be cured to form a portion ofthe magnetic structure and/or device. In various embodiments, immersionsystem 228 may be used with an immersion mask to select portions of amagnetic structure and/or device to etch, clean, dissolve, or fill amagnetic structure and/or device. In some embodiments, immersion system228 may be implemented with a heater, lamp, and/or other type of curingdevice to help dry or cure a magnetic structure and/or device.

In various embodiments, other subsystems 230 may include one or moredevices configured to facilitate a fabrication process performed byfabrication system 220. For example, other subsystems 230 may includevarious types of nonmagnetic AMSs, material supply and/or preparationsystems, a curing, melting, sintering, or fusing laser and/or electronbeam device, a pattern projector, a temperature sensor (e.g., configuredto monitor process temperatures associated with operation of fabricationsystem 220), a magnetic field generator, a demagnetizer, a device orvacuum chuck, an alignment sensor (e.g., configured to sense a positionand/or orientation of a magnetic structure or device partially or fullyfabricated by fabrication system 220), one or more actuators configuredto position elements of fabrication system 220 (e.g., including elementsof other subsystems 230), one or more heaters (e.g., to adjust atemperature of elements of fabrication system 220), and/or otherdevices. In some embodiments, other subsystems 230 may include a pic andplace machine configured to place integrated circuits and/or othercircuit elements on a substrate, such as a printed circuit board (PCB),to integrate such circuit elements with a magnetic structure and/ordevice provided, at least in part, by MMAMS 110, onto the substrate.

In some embodiments, various devices of other subsystems 230 may beintegrated with other elements of fabrication system 220 to helpfacilitate forming a magnetic structure and/or device. For example, aheater and/or temperature sensor of other subsystems 230 may beintegrated with electroformation system 224 and/or immersion system 228and/or coupled to controller 212 to help control or maintain aparticular temperature at electroformation system 224 and/or immersionsystem 228. In other embodiments, a heater, a magnetic field generator,a demagnetizer, and/or other magnetism adjustment device may beintegrated with any element of fabrication system 220 to help adjust amagnetic property of a magnetic structure and/or device formed byfabrication system 220.

By integrating MMAMS 110 with fabrication system 220, embodiments of thepresent disclosure may be configured to provide electronic devices withintegrated magnetic structures having reliable dimension resolutions of10-20 um. Moreover, due in part to the relatively fine dimensionresolution and/or the spatial flexibility offered by additivemanufacturing using magnetic material matrixes, electronic devicesincluding integrated magnetic structures formed using the processesand/or systems described herein may be configured to function underand/or benefit from extremely complex and compact three dimensionalmagnetic fields and/or gradients, as described herein.

One magnetic device that can take advantage of the manufacturingcapabilities of MMAMS 110 and/or fabrication system 220 is atransmission line for electromagnetic waves (e.g., electrical and/oroptical propagating waves). To explain, ferrite materials can be usefulto modify propagation characteristics of electromagnetic waves, andmagnetic poling is typically required for microwave or higher frequencyapplications involving ferrite materials. Conventional poling methodstypically rely on relatively large (size and field strength) externalmagnets and/or inductors to polarize machine polished (e.g., relativelylarge) ferrite blocks. The size of the external magnet is typically atleast a few mm across in each of the three principal dimensional axes.Ferrite matrixes by themselves allow for much smaller features sizes andtighter positional tolerances, but conventional methods for interactingwith ferrites involve surrounding a transmission line/waveguide with therelatively large external magnets. The strength of the poling fieldrequired for the ferrite material depends on the type of ferritematerial and the application. The field strength supplied by theexternal magnet depends on its physical distance from the ferritematerial and, in some embodiments, the number of magnetic poles focusingit onto the ferrite. In many applications, geometrical restrictionsrequire external magnets to be placed hundreds of microns or more fromthe ferrite. Under such conditions, strong magnets must be used, whichcan interfere with other electronic components and lead to increaseddesign complexity and lower overall product performance.

Embodiments of the present disclosure allow the poling magnet to beplaced within a few microns of the ferrite. By incorporating the magnetdirectly into the transmission line/waveguide, the magnetic field isessentially focused directly through the ferrite. Such arrangementsreduce the need for 1 Tesla magnets to be used because most ferritesonly require a 0.2-0.5 Tesla applied field in order to becomesufficiently polarized to have an effect on a local propagatingelectromagnetic wave. By providing the reduced field requirements andthe general decrease in size of the magnet, embodiments of the presentdisclosure reduce the amount of magnetic field interactions present inelectronic devices incorporating a conforming magnetic structure ordevice.

For example, a ferromagnetic material coated with a nonmagneticconductor may be used as the inner and/or outer conductor of a coaxialtransmission line. Ferrite material may be placed inside the dielectricbetween the inner and outer conductors. External magnetic fields may beapplied as needed to magnetize the ferromagnetic material (e.g., in aparticular direction relative to an expected propagation direction of anelectromagnetic wave or other type of signal). The nonmagnetic conductorcovering the ferromagnetic material prevents electromagnetic coupling ofthe magnetic field to the incident electromagnetic wave in nonmagneticdielectrics. However, the ferrite material (e.g., a magnetic dielectric)becomes polarized by the ferromagnetic material within the nonmagneticconductor. This causes ferrite polarization of the electromagnetic fieldover the entire dielectric region. The result is a reciprocal ornonreciprocal phase shift of the electromagnetic wave propagating downthe transmission line, and similar structures can be used to form anumber of different devices configured to modify how the electromagneticwave propagates through the coaxial transmission line/waveguide.

Embodiments of the present disclosure provide a highly compactmethodology to incorporate magnetic elements into electromagneticfilters, transmission lines, and couplers for increased radio frequencyperformance. The dimensions of the magnetic structures described hereincan be patterned from relatively large cm sizes down to approximately 10um. The field strength of a hard ferromagnet used for macro-scaleapplications can be greater than 1 Tesla, but the field strength of ahard ferromagnet matrix patterned to 10 um in size can be between 0.2and 0.5 Tesla. Soft ferromagnets demonstrate magnetic field strengthsbetween 0.4 and 1.75 Tesla. The compact nature of the describedfabrication processes allows embodiments to achieve nearly idealmagnetic coupling between magnetic structures integrated into a magneticdevice, which helps compensate for any loss in field strength resultingfrom use of an additive manufacturing process, as described herein.

FIGS. 3A-K illustrate magnetic devices 300A-300K corresponding tovarious fabrication stages for a magnetic device and/or structure (e.g.,the final form of which may correspond to magnetic device 300K) inaccordance with an embodiment of the disclosure.

In particular, magnetic devices 300A-300K may correspond to atransmission line for electromagnetic waves including one or moremagnetic structures configured to modify propagation of theelectromagnetic waves within the transmission line. For example,magnetic devices 300A-300K may correspond to or form part of a truedelay line, a ferrite core transformer, a coupler, an isolator, acirculator, a ferrite phase shifter, a nonreciprocal delay line, aferromagnetic phase shifter/delay line, ultra small (e.g., approximatelybetween 10-20 um diameter, preferably 10 um) magnets for relay switches,micro Halbach array magnets for nuclear magnetic resonance (NMR) and/orscanning electron microcopy (SEM) instrument design, and/or othersubstantially passive electromagnetic wave propagationmodification/adjustment device, in the form of a rectangular or square(e.g., where squares are a subset of the set of rectangles) coaxialtransmission line (e.g., a micro-coax transmission line) and/orwaveguide including one or more magnetic structures formed by anadditive manufacturing process, as described herein. Fabricationsequences described herein may be monolithically integrated and can bebatch fabricated with an expected completion time between a few hours toone or two days, which is a substantial decrease in overall fabricationtime.

FIG. 3A illustrates a first fabrication stage of magnetic device 300K.As shown in the embodiment provided by FIG. 3A, magnetic device 300Aincludes a copper layer 322 formed on a radio frequency (RF) dielectricboard (e.g., a PCB) 320. In some embodiments, copper layer 322 may beone mil thick, so as to form a relatively robust conductive substrate onwhich to form magnetic device 300K and/or place other elements of aconstituent electronic device. RF dielectric board 320 may be purchasedwith a preformed copper layer 322, for example, or a combination ofdeposition system 226 and/or electroformation system 224 of fabricationsystem 224 may be used to form copper layer 322 on a supplied bare RFdielectric board 320.

In FIG. 3B, a conductive polymer may be formed on copper layer 322 toform left and right conductive polymer mesas 324 and 325 of magneticdevice 300B. For example, left and right conductive polymer mesas 324and 325 may be formed on copper layer 322 using an AMS (e.g., an elementof other subsystems 230 similar to MMAMS 110) configured to use aconductive polymer to form left and right conductive polymer mesas 324and 325. Such conductive polymer may be implemented as an ABS or otherplastic or polymer impregnated with conductive particles (e.g.,nanoparticles) sufficient to allow metal layers to be plated (e.g.,electroplated) onto left and right conductive polymer mesas 324 and 325after they are formed. In various embodiments, the conductive particlesare substantially nonmagnetic. For example, in one embodiment, the ABSformulation may be referred to as laser direct structuring (LDS)platable ABS material. In some embodiments, left and right conductivepolymer mesas 324 and 325 may be approximately 40 um thick and wideenough to support the remaining fabrication steps for magnetic device300K. More generally, the thickness of left and right conductive polymermesas 324 and 325 may be selected in relation to a thickness of ferritematrix 328 and/or other substantially nonconductive material formedbetween left and right conductive polymer mesas 324 and 325 so tofacilitate the formation of an outer conductor for magnetic device 300K,for example.

In FIG. 3C, a copper film 326 may be formed on left and right conductivepolymer mesas 324 and 325 and copper layer 322 to form magnetic device300C. For example, copper film 326 may be formed on left and rightconductive polymer mesas 324 and 325 and copper layer 322 usingelectroformation system 224 (e.g., to form, at least in part, a metallicsurface layer for a center conductor 340 and/or outer conductor 346, asdescribed more fully with respect to FIGS. 3H and 3I). In someembodiments, copper film 326 may be approximately 10 um thick.

In FIG. 3D, a ferrite matrix 328 may be formed between left and rightconductive polymer mesas 324 and 325 and on copper film 326 to formmagnetic device 300D. For example, ferrite matrix 328 may be formedusing MMAMS 110. In some embodiments, MMAMS 110 may be implemented withan FFF AMS, for example, and ferrite matrix 328 may include ferrite(e.g., ferrimagnetic) powder impregnated filament polymer (e.g., BariumHexaferrite powder impregnated filament ABS) prepared by preparationsystem 211, for example, and provided to supplier 115 of MMAMS 110. Inother embodiments, MMAMS 110 may be implemented with astereolithographic AMS, for example, and ferrite matrix 328 may includeferrite powder impregnated liquid polymer mixed together or otherwiseprepared by preparation system 211, for example, and provided tosupplier 115 of MMAMS 110. In various embodiments, ferrite matrix 328may be between approximately 10 urn and 40 um thick and substantiallyfill the surface between left and right conductive polymer mesas 324 and325. Further, ferrite matrix 328 may be substantially dielectric, basedon the material selection of the ferrite powder and the polymer. A curedor otherwise solidified ferrite matrix 328 may also be referred to as aferrite structure or ferrimagnet.

In FIG. 3E, a copper seed layer 330 may be formed on ferrite matrix 328to form magnetic device 300E. For example, copper seed layer 330 may beformed using deposition system 226 and a deposition mask. In someembodiments, copper seed layer 330 may be approximately 10 um thick andwide enough to support the remaining fabrication steps for magneticdevice 300K, including leaving left and right portions 330L and 330R offerrite matrix 328, which are adjacent to left and right conductivepolymer mesas 324 and 325, uncovered by any conductive layer.

In FIG. 3F, conductive polymer walls 332-335 may be formed on copperfilm 326 over left and right conductive polymer mesas 324 and 325, anddissolvable polymer fillers 336-337 may be formed on left and rightportions 330L and 330R of ferrite matrix 328 to form magnetic device300F. For example, conductive polymer walls 332-335 and/or dissolvablepolymer fillers 336-337 may be formed using an AMS (e.g., othersubsystems 230) configured to use ABS conductive polymer (as in FIG. 3B)and/or dissolvable polymer, accordingly, to form center cavity 333F. Insome embodiments, conductive polymer walls 332-335 and dissolvablepolymer fillers 336-337 may be formed to be approximately 125 um thickand wide enough to support the remaining fabrication steps for magneticdevice 300K, including dissolvable polymer fillers 336-337 each beingwide enough to completely cover left and right portions 330L and 330R offerrite matrix 328 and, in some embodiments, additional portions ofcopper film 326 and copper seed layer 330 (e.g., approximately 1, 5, or10 um portions) adjoining left and right portions 330L and 330R, to helpensure conductive polymer walls 332-335 do not directly contact ferritematrix 328. In general, conductive polymer walls 332-335 and/ordissolvable polymer fillers 336-337 may be formed with any thicknesssufficient to provide structural support for the remaining fabricationsteps for magnetic device 300K.

In various embodiments, inner conductive polymer walls 333-334 may beconfigured to form at least a portion of a center conductor of magneticdevice 300K, and outer conductive polymer walls 332 and 335 may beconfigured to form at least a portion of an outer conductor of magneticdevice 300K, and both should be at least approximately 2 or 3 times theskin depth of the electromagnetic field at which magnetic structure 300Kis designed to operate. For example, for 30 GHz electrical signals,inner conductive polymer walls 333-334 need not be thicker than 3-5 um(e.g., approximately twice the electromagnetic skin depth of theconductive polymer with respect to electromagnetic waves propagatingalong inner conductive polymer walls 333-334 at that operatingfrequency), thereby facilitating the compactness of magnetic device 300Kand allowing for nearly ideal magnetic coupling between ferrite matrix328 and a ferromagnetic matrix embedded within a center conductor orouter conductor of magnetic device 300K, described more fully withrespect to FIGS. 3G-3K and 4A-B. In various embodiments, innerconductive polymer walls 333-334 and/or outer conductive polymer walls332 and 335 may be nonmagnetic, similar to any structures formed with aconductive polymer, as described herein.

In FIG. 3G, a ferromagnetic matrix 338 may be formed on copper film 326over ferrite matrix 328 and within center cavity 333F to form magneticdevice 300G. For example, ferromagnetic matrix 338 may be formed usingMMAMS 110. In some embodiments, MMAMS 110 may be implemented with an FFFAMS, for example, and ferromagnetic matrix 338 may include ferromagneticpowder impregnated filament polymer (e.g., NdFeB powder impregnatedfilament ABS) prepared by preparation system 211, for example, andprovided to supplier 115 of MMAMS 110. In other embodiments, MMAMS 110may be implemented with a stereolithographic AMS, for example, andferromagnetic matrix 338 may include ferromagnetic powder impregnatedliquid polymer mixed together or otherwise prepared by preparationsystem 211, for example, and provided to supplier 115 of MMAMS 110. Invarious embodiments, ferromagnetic matrix 338 may be approximately 125um thick and substantially fill center cavity 333F. Subsequent toformation of magnetic device 300K, ferromagnetic matrix 338 may bemagnetized (e.g., using a magnetic field generator) to create a magneticfield appropriate to interact with ferrite matrix 328 to create one ormore electromagnetic wave propagation modification/adjustment devices,as described herein. A cured or otherwise solidified ferromagneticmatrix 338 may also be referred to as a ferromagnetic structure and/orferromagnet.

In FIG. 3H, conductive polymer may be formed on top of inner conductivepolymer walls 333-334 and over ferromagnetic matrix 338 to form centerconductor 340, conductive polymer may be formed on top of outerconductive polymer walls 332 and 335 to form outer conductive walls 342and 343, and dissolvable polymer may be formed on top of dissolvablepolymer fillers 336-337 and over center conductor 340 to formdissolvable polymer filler 344, in order to form magnetic device 300H.For example, center conductor 340, outer conductive walls 342 and 343,and/or dissolvable polymer filler 344 may be formed using an AMS (e.g.,other subsystems 230) configured to use ABS conductive polymer (as inFIG. 3B) and/or dissolvable polymer, as appropriate. In someembodiments, center conductor 340 may be formed to be approximately20-40 um thick above ferromagnetic matrix 338. In related embodiments,dissolvable polymer filler 344 may be formed to be approximately 20-40um thick over center conductor 340, and outer conductive walls 342 and343 may be formed to be substantially flush with a top surface ofdissolvable polymer filler 344. In various embodiments, center conductor340 may include portions of copper seed layer 330.

In FIG. 3I, conductive polymer may be formed on top of outer conductivewalls 342 and 343 and over dissolvable polymer filler 344 to form outerconductor 346, to form magnetic device 300I. For example, outerconductor 346 may be formed using an AMS (e.g., other subsystems 230)configured to use ABS conductive polymer (as in FIG. 3B). In someembodiments, outer conductor 346 may be formed to be approximately 50 umthick above dissolvable polymer filler 344. In various embodiments,outer conductor 346 may include portions of left and right conductivepolymer mesas 324 and 325, copper layer 322, and/or copper layer 326.

In FIG. 3J, dissolvable polymer filler 344 may be removed to form adielectric 348 (e.g., an air gap) and to form magnetic device 300J. Forexample, dissolvable polymer filler 344 may be dissolved or otherwiseremoved from three of the cross sectional sides shown in FIG. 3J bysolvent applied by immersion system 228, which can enter and exit thespace between center conductor 340 and outer conductor 346 through endfaces and/or access holes (not explicitly shown in FIG. 3J) formedthrough outer conductor 346. In some embodiments, dielectric 348 may beimplemented with other dielectric materials that may be dispensed and/orotherwise formed in the space between center conductor 340 and outerconductor 346. For example, in some embodiments, ferrite matrix 328 anddielectric 348 may together form a dielectric for magnetic device 300J.

In FIG. 3K, copper layer 350 may be formed on all accessible conductivesurfaces of magnetic device 300J in order to form magnetic device 300K.For example, copper layer 350 may be formed by electroformation system224, and copper layer 250 can be applied to cover the outside of centerconductor 340 and the outside and inside of outer conductor 346 (e.g.,to form, at least in part, a metallic surface layer on center conductor340 and/or outer conductor 346). In some embodiments, copper layer 350may be approximately 3-10 um thick (e.g., approximately 2-3 times theskin depth at the operating frequency plus sufficient thickness tocompensate for any surface roughness and/or other imperfections in theaccessible conductive surfaces of magnetic device 300J). Each of FIGS.3A-3K illustrate cross sections of magnetic devices, and it isunderstood that the structure shown in FIGS. 3A-3K can be extended inany longitudinal shape to form a transmission line, similar to theshapes presented in FIG. 5A. Also, although the coaxial dielectric shownin the embodiment presented by FIG. 3K is primarily dielectric (e.g.,air gap) 348 and ferrite matrix 328, in other embodiments, dielectric348 may be replaced with a different dielectric material havingdifferent dielectric characteristics, for example, and ferrite matrix328 may be supplemented with additional layers of dielectric material,which may be disposed beneath ferrite matrix 328.

Also shown in FIG. 3K are directions 352 and 354. In variousembodiments, a strength and/or orientation of a poling field (e.g.provided by ferromagnetic matrix 338) can be selected to modify apropagation characteristic (e.g., a phase shift, or a delay) in aparticular way. For example, when the direction of the poling field isperpendicular to the propagation direction and the plane of ferritematrix 328, as shown with direction 352, magnetic device 300Kcorresponds to a reciprocal phase shifter or other type of reciprocaldevice. By contrast, when the direction of the poling field (e.g., asset by a magnetic field generator acting on ferromagnetic matrix 338) isperpendicular to the propagation direction but coplanar with the planeof ferrite matrix 328, as shown with direction 354, magnetic device 300Kcorresponds to a non-reciprocal phase shifter and/or othernon-reciprocal device.

In addition, ferromagnetic matrix 338 may in some embodiments beimplemented with a soft ferromagnet (e.g., formed using NiFe powder, forexample), which can be used to dynamically control polarization offerrite matrix 328 and therein the phase shift response of magneticdevice 300K. In such embodiments, the soft ferromagnetic matrix must bemagnetized by an externally applied field, such as by a solenoid and/orby positioning a permanent magnet in close proximity (e.g., using aplacement device and/or an embodiment of MMAMS 110).

FIGS. 4A-F illustrate magnetic devices and/or structures formed inaccordance with an embodiment of the disclosure, such as using processessimilar to those discussed with reference to FIGS. 3A-K. In particular,FIG. 4A shows a transmission line 400A similar to magnetic device 300K,but where center conductor 440 includes separator 441 separatingferromagnetic matrix 438 from ferrite matrix 328 to increase theconductivity of center conductor 440 and/or reduce the effect of theelectromagnetic wave propagation modification/adjustment device byreducing the magnetic field strength across ferrite matrix 328.

FIG. 4B illustrates a magnetic device and/or structure 400B inaccordance with an embodiment of the disclosure. In particular, FIG. 4Bshows a transmission line similar to magnetic devices 300K and/or 400A,but where center conductor 440B is solid conductive polymer, andferromagnetic matrix 438 is split into two separate ferromagneticmatrixes 438B-C, formed within opposing portions of outer conductor 446,that are configured (e.g., shaped and/or placed) to provide additionalmagnetic field strength and/or uniformity over ferrite matrix 428. Asnoted above, ferromagnetic matrixes 438B-C may be implemented with hardor soft ferromagnetic material.

FIG. 4C illustrates a magnetic device and/or structure 400C inaccordance with an embodiment of the disclosure. In particular, FIG. 4Cshows a transmission line similar to a combination of magnetic devices400A and 400B, including all three ferromagnetic matrixes 438, 438B, and438C, which may be implemented with hard or soft ferromagnetic material.

FIG. 4D illustrates a magnetic device and/or structure 400D inaccordance with an embodiment of the disclosure. In particular, FIG. 4Dshows a transmission line similar to magnetic devices 300K, and/or400A-C, including a solid center conductor 440B, but including a singleferromagnetic matrix 438D (e.g., which may be implemented with hard orsoft ferromagnetic material) embedded in a top portion of outerconductor 446D opposite center conductor 440B from ferrite matrix 328.FIG. 4E shows a transmission line 400E very similar to magnetic device400D, including a solid center conductor 440B, but including a singleferromagnetic matrix 438E (e.g., which may be implemented with hard orsoft ferromagnetic material) disposed below RF dielectric board 320 andadjacent to ferrite matrix 328.

FIG. 4F illustrates a magnetic device and/or structure 400F inaccordance with an embodiment of the disclosure. In particular, FIG. 4Fshows a transmission line similar to a combination of magnetic devices300K and 400B, including all three ferromagnetic matrixes 338, 438B, and438C, which may be implemented with hard or soft ferromagnetic material.

FIG. 5A illustrates diagrams of various shapes for a magnetic deviceand/or structure in accordance with an embodiment of the disclosure. Inparticular, FIG. 5A presents perspective views of different layouts orfabrication patterns or shapes for transmission lines and/or waveguidesformed using similar methods as those presented with respect to FIGS.3A-K and/or 4A-F. For example, magnetic device 510 shows a rectangularcoaxial transmission line that is relatively straight, magnetic device512 shows an elongated rectangular coaxial transmission line formed witha 90 degree bend, magnetic device 514 shows an elongated rectangularcoaxial transmission line formed with a sharper approximate 45 degreebend, magnetic device 516 shows an elongated rectangular coaxialtransmission line formed with a 180 degree bend, magnetic device 518shows an elongated rectangular coaxial transmission line formed with an“S” bend or two adjacent approximate 180 degree bends, and magneticdevice 520 shows an elongated rectangular coaxial transmission lineformed with two “S” bends. Embodiments of the present disclosure maycombine various aspects of the illustrated shapes to construct a varietyof different transmission lines and/or other magnetic devices withvarying electromagnetic wave propagation modification capabilitiesand/or ranges of capabilities.

As an example, FIG. 5B illustrates a magnetic device and/or structureimplemented in an electronic device in accordance with an embodiment ofthe disclosure. For example, electronic device 530 may include a signalamplifier, a filter, a receiver, a transmitter, a transceiver, and/orother circuitry configured to provide an electronic function forelectronic device 530, which may be implemented as a radar system, acommunications system, a processing system, various other ranging sensorsystems, and/or other electronic devices. In the embodiment shown inFIG. 5B, electronic device 530 includes a signal source 532, atransmission line 534, and a signal sink 536. For example, signal source532 may be a transmitter, transmission line 534 may be a magnetic deviceconfigured to couple signal source 532 to signal sink 536 and/or toprovide a desired phase shift and/or delay for an electromagnetic wavetravelling through transmission line 534, and signal sink 536 may be anantenna (e.g., a patch antenna array) or an optical aperture. Ingeneral, signal source 532 may be any electronic device configured togenerate or provide an electromagnetic signal, transmission line 534 maybe any embodiment of the present disclosure including a magneticstructure and/or device configured to modify electromagneticwaves/signals as they propagate through transmission line 534, andsignal sink 536 may be any electronic device and/or element configuredto receive an electromagnetic wave from signal source 532 and/ortransmission line 534. Embodiments of electronic device 530 may beconfigured (e.g., scaled) to operate over a frequency range and/oraccording to various applications from 100-400 MHz up to approximately60 GHz or higher, for example.

FIG. 6 illustrates a flow diagram 600 of various operations to form amagnetic device using an MMAMS in accordance with an embodiment of thedisclosure. In some embodiments, the operations of FIG. 6 may beimplemented as software instructions executed by one or more logicdevices associated with corresponding elements of FIGS. 1-2. Moregenerally, the operations of FIG. 6 may be implemented with anycombination of software instructions and/or electronic hardware (e.g.,inductors, capacitors, amplifiers, or other analog and/or digitalcomponents). Any step, sub-step, sub-process, or block of process 600may be performed in an order or arrangement different from theembodiments illustrated by FIG. 6. For example, in other embodiments,one or more blocks may be omitted from the various processes, and blocksfrom one process may be included in another process. Furthermore, blockinputs, block outputs, and/or other operational parameters may be storedprior to moving to a following portion of a corresponding process.Although process 600 is described with reference to elements of FIGS.1-5B, process 600 may be performed by other elements and including adifferent selection of user modules, system fabrics, and/or subsystems.

In block 602, an MMAMS receives a magnetic device design. For example,controller 112 of MMAMS 110 may be configured to receive a data filecomprising a magnetic device design corresponding to magneticdevice/transmission line 300K. In some embodiments, a magnetic devicedesign may be stored on a memory device that is coupled to controller112 over an interface. Once received, controller 112 may be configuredto convert or interpret the magnetic device design to control variouselements of MMAMS 110 to construct or form magnetic device 300K. Inother embodiments, controller 212 may be configured to receive the datafile and to coordinate with controller 112 and/or other elements offabrication system 220 to control various elements of fabrication system220 to construct or form magnetic device 300K.

In block 604, an MMAMS receives magnetic material matrix. For example,depending on the type(s) of AMS integrated into MMAMS 110, MMAMS 110 maybe configured to receive magnetic matrix liquid and/or magnetic matrixfilament from preparation system 211 at supplier 115. In general, MMAMS110 may be configured to receive any type of magnetic material matrixwith which it is able and/or configured to form magnetic structures.Prior to receiving the magnetic material matrix, preparation system 211may be configured to mix ferrite or ferromagnetic powder with a liquidpolymer resin to form bulk liquid magnetic matrix, for example, andeither provide the bulk liquid magnetic matrix to supplier 115 or firstcure or solidify the bulk liquid magnetic matrix to form bulk solidmagnetic matrix, extrude magnetic matrix filament from the bulk solidmagnetic matrix, and then provide the magnetic matrix filament (e.g., ona reel or spool) to supplier 115.

In block 606, an MMAMS dispenses magnetic material matrix received inblock 604 to form a magnetic structure of the magnetic device describedin the magnetic device design received in block 602. For example,controller 112 of MMAMS 110 may be configured to control dispenser 114to dispense liquid or filament or other type of magnetic material matrixto form ferrite matrix/structure 328 and/or ferromagneticmatrix/structure 338 of magnetic device 300K. In embodiments where amagnetic structure includes a ferrite matrix, the ferrite matrix may beconfigured to receive a poling field from a ferromagnet. In embodimentswhere a magnetic structure includes a ferromagnetic matrix, theferromagnetic matrix may be configured to provide a poling field to aferrimagnet. By providing such magnetic structures and/or devices in thecontext of additive manufacturing processing, embodiments of the presentdisclosure enable formation of magnetic devices relatively quickly,compactly, and inexpensively. Moreover, such devices exhibit excellentperformance relative to conventional phase shift technology, forexample, can reduce size, insertion loss, and weight to approximately0.1 cubic inch, 0.05 dB, and less than 100 grams for each device, andcan operate reliably when conveying more than 1 Watt of transmittedpower (e.g., for phased radar array applications). Conventional systemsare typically an order of magnitude worse across the range ofperformance metrics, at much higher overall cost.

FIG. 7 illustrates a flow diagram 700 of various operations to use amagnetic device and/or structure in accordance with an embodiment of thedisclosure. In some embodiments, the operations of FIG. 7 may beimplemented as software instructions executed by one or more logicdevices associated with corresponding elements of FIGS. 1-2. Moregenerally, the operations of FIG. 7 may be implemented with anycombination of software instructions and/or electronic hardware (e.g.,inductors, capacitors, amplifiers, or other analog and/or digitalcomponents). Any step, sub-step, sub-process, or block of process 700may be performed in an order or arrangement different from theembodiments illustrated by FIG. 7. For example, in other embodiments,one or more blocks may be omitted from the various processes, and blocksfrom one process may be included in another process. Furthermore, blockinputs, block outputs, and/or other operational parameters may be storedprior to moving to a following portion of a corresponding process.Although process 700 is described with reference to elements of FIGS.1-5B, process 700 may be performed by other elements and including adifferent selection of user modules, system fabrics, and/or subsystems.

In block 702, a signal of signal source is received by a transmissionline. For example, transmission line 534 of electronic device 530 may beconfigured to receive a signal (e.g., an electrical signal, an opticalsignal, and/or any other type of propagating electromagnetic wave, forexample) from signal source 532. In various embodiments, transmissionline 534 may be implemented according to magnetic device 300K, 400A,400B, and/or any of magnetic devices 510-520, using an embodiment ofMMAMS 110 and/or fabrication system 220, as described herein.

In block 704, the signal received in block 702 is propagated between asignal source and a signal sink. For example, transmission line 534 maybe configured to propagate a signal received from signal source 532between signal source 532 and signal sink 536. As described herein,magnetic structures within transmission line 534 may beconfigured/formed to modify a propagation characteristic of anelectromagnetic wave associated with the propagated signal. For example,transmission line 534 may be configured to apply a phase shift, a truedelay, a filter characteristic, and/or other propagation characteristicmodifications to the signal as it propagates through transmission line534.

In block 706, the signal propagated in block 704 is provided by atransmission line to a signal sink. For example, transmission line 534may be configured to provide a signal propagated by transmission line534 between signal source 532 and signal sink 536 to signal sink 536. Byimplementing signal transmission using embodiments of the magneticstructures and/or devices formed using the magnetic materials additivemanufacturing systems described herein, embodiments of the presentdisclosure provide inexpensive, compact, and robust electronic devices,which can be integrated into a variety of systems, such as navigationalsensors and/or other systems used in operation of an aircraft.

Where applicable, various embodiments provided by the present disclosurecan be implemented using hardware, software, or combinations of hardwareand software. Also where applicable, the various hardware componentsand/or software components set forth herein can be combined intocomposite components comprising software, hardware, and/or both withoutdeparting from the spirit of the present disclosure. Where applicable,the various hardware components and/or software components set forthherein can be separated into sub-components comprising software,hardware, or both without departing from the spirit of the presentdisclosure. In addition, where applicable, it is contemplated thatsoftware components can be implemented as hardware components, andvice-versa.

Software in accordance with the present disclosure, such asnon-transitory instructions, program code, and/or data, can be stored onone or more non-transitory machine readable mediums. It is alsocontemplated that software identified herein can be implemented usingone or more general purpose or specific purpose computers and/orcomputer systems, networked and/or otherwise. Where applicable, theordering of various steps described herein can be changed, combined intocomposite steps, and/or separated into sub-steps to provide featuresdescribed herein.

Embodiments described above illustrate but do not limit the invention.It should also be understood that numerous modifications and variationsare possible in accordance with the principles of the invention.Accordingly, the scope of the invention is defined only by the followingclaims.

What is claimed is:
 1. A method (600), comprising: receiving (602) amagnetic device design comprising a magnetic structure (300K, 400A-F,534) to be formed from a magnetic material matrix (328, 338, 438,438B-E), wherein the magnetic material matrix is configured to be usedin a magnetic materials additive manufacturing system “MMAMS” (110);receiving (604) the magnetic material matrix by the MMAMS; anddispensing (606) the magnetic material matrix using the MMAMS to formthe magnetic structure.
 2. The method of claim 1, wherein: the MMAMS isat least partially implemented by a fused filament fabrication additivemanufacturing system; the magnetic material matrix comprises a magneticmatrix filament; and the dispensing the magnetic material matrixcomprises using an actuated filament extrusion nozzle to dispense themagnetic matrix filament in one or more patterned layers to form themagnetic structure.
 3. The method of claim 1, wherein: the MMAMS is atleast partially implemented by a stereolithographic additivemanufacturing system; the magnetic material matrix comprises a liquidmagnetic matrix; and the dispensing the magnetic material matrixcomprises using an actuated liquid dispenser nozzle to dispense themagnetic matrix liquid in one or more patterned layers to form themagnetic structure.
 4. The method of claim 1, wherein: the magneticmaterial matrix comprises a ferrite matrix (328); and the magneticstructure comprises the ferrite matrix configured to receive a polingfield from a ferromagnet (338, 438, 438B-E).
 5. The method of claim 1,wherein: the magnetic material matrix comprises a ferromagnetic matrix(338, 438, 438B-E); and the magnetic structure comprises theferromagnetic matrix configured to provide a poling field to aferrimagnet (328).
 6. The method of claim 1, wherein: the magneticmaterial matrix comprises a ferrite matrix (328) and the magneticstructure comprises a transmission line (300K, 400A-F); the transmissionline comprises a center conductor (340, 440, 440B) separated from anouter conductor (346, 446) by at least one dielectric (328, 348); the atleast one dielectric comprises the ferrite matrix dispensed by theMMAMS; and at least one of the center conductor and the outer conductorcomprise a ferromagnetic matrix (338, 438, 438B-C) configured to providea poling field to the ferrite matrix to modify an electromagneticpropagation characteristic of an electromagnetic wave while itpropagates through the transmission line.
 7. The method of claim 6,wherein: the poling field comprises at least one of a strength andorientation relative to a propagation direction of the electromagneticwave that is selected to modify at least one of a phase shift and adelay associated with the electromagnetic wave.
 8. The method of claim6, wherein: the ferromagnetic matrix is disposed within the centerconductor; and a thickness of a nonmagnetic portion of the centerconductor surrounding the ferromagnetic matrix is greater than or equalto approximately two to three times a skin depth corresponding to theelectromagnetic wave.
 9. The method of claim 6, wherein: theferromagnetic matrix is disposed within the center conductor; the centerconductor comprises a nonmagnetic conductive polymer (340, 440, 440B)and a metallic surface layer (330, 350); and the ferrite matrix isseparated from the ferromagnetic matrix by the metallic surface layer.10. The method of claim 6, wherein: the ferromagnetic matrix comprises afirst ferromagnetic matrix (438B) disposed within a first portion of theouter conductor; the outer conductor comprises a second ferromagneticmatrix (438C) disposed within a second portion of the outer conductoropposite the center conductor; the ferrite matrix is disposed at leastbetween the first and second portions of the outer conductor; and thefirst and second ferromagnetic matrixes are configured to provide thepoling field.
 11. The method of claim 1, further comprising preparingthe magnetic material matrix by: mixing ferrite or ferromagnetic powderwith a liquid polymer resin to form bulk liquid magnetic matrix; andproviding the bulk liquid magnetic matrix to the MMAMS as the magneticmaterial matrix.
 12. The method of claim 1, further comprising preparingthe magnetic material matrix by: mixing ferrite or ferromagnetic powderwith a liquid polymer resin to form bulk liquid magnetic matrix; curingor solidifying the bulk liquid magnetic matrix to form bulk solidmagnetic matrix; extruding magnetic matrix filament from the bulk solidmagnetic matrix; and providing the magnetic matrix filament to the MMAMSas the magnetic material matrix.
 13. A system (530), comprising: atransmission line (534) coupled between a signal source (532) and asignal sink (536), wherein: the transmission line comprises a centerconductor (340, 440, 440B) separated from an outer conductor (346, 446)by at least one dielectric (328, 348); the at least one dielectriccomprises a ferrite matrix (328) dispensed by a magnetic materialsadditive manufacturing system “MMAMS” (110); and at least one of thecenter conductor and the outer conductor comprise a ferromagnetic matrix(338, 438, 438B-C) dispensed by the MMAMS and configured to provide apoling field to the ferrite matrix to modify an electromagneticpropagation characteristic of an electromagnetic wave while itpropagates between the signal source and the signal sink.
 14. The systemof claim 13, wherein: the poling field comprises at least one of astrength and an orientation relative to a propagation direction of theelectromagnetic wave that is selected to modify at least one of a phaseshift and a delay associated with the electromagnetic wave.
 15. Thesystem of claim 13, wherein: the ferromagnetic matrix is disposed withinthe center conductor; and a thickness of a nonmagnetic portion of thecenter conductor surrounding the ferromagnetic matrix is greater than orequal to approximately two to three times a skin depth corresponding tothe electromagnetic wave.
 16. The system of claim 13, wherein: theferromagnetic matrix is disposed within the center conductor; the centerconductor comprises a nonmagnetic conductive polymer (340, 440, 440B)and a metallic surface layer (330, 350); and the ferrite matrix isseparated from the ferromagnetic matrix by the metallic surface layer.17. The system of claim 13, wherein: the ferromagnetic matrix comprisesa first ferromagnetic matrix (438B) disposed within a first portion ofthe outer conductor; the outer conductor comprises a secondferromagnetic matrix (438C) disposed within a second portion of theouter conductor opposite the center conductor; the ferrite matrix isdisposed at least between the first and second portions of the outerconductor; and the first and second ferromagnetic matrixes areconfigured to provide the poling field.
 18. The system of claim 13,wherein: the transmission line comprises a rectangular coaxialtransmission line; and the at least one dielectric comprises an air gapdisposed on three of four cross sectional sides of the center conductor.19. A method (700), comprising: receiving (702) a signal of a signalsource (532) by a transmission line (534); propagating (704) the signalbetween the signal source and a signal sink (536); and providing (706)the signal to the signal sink by the transmission line, wherein: thetransmission line comprises a center conductor (340, 440, 440B)separated from an outer conductor (346, 446) by at least one dielectric(328, 348); the at least one dielectric comprises a ferrite matrix (328)dispensed by a magnetic materials additive manufacturing system “MMAMS”(110); and the transmission line comprises a ferromagnetic matrix (338,438, 438B-E) dispensed by the MMAMS and configured to provide a polingfield to the ferrite matrix to modify an electromagnetic propagationcharacteristic of the signal while it propagates between the signalsource and the signal sink.
 20. The method of claim 19, wherein: thepoling field comprises at least one of a strength and an orientationrelative to a propagation direction of the signal that is selected tomodify at least one of a phase shift and a delay associated with thesignal.
 21. The method of claim 19, wherein: the ferromagnetic matrix isdisposed within the center conductor; the center conductor comprises anonmagnetic conductive polymer (340, 440, 440B) and a metallic surfacelayer (330, 350); and the ferrite matrix is separated from theferromagnetic matrix by the metallic surface layer.
 22. The method ofclaim 19, wherein: the ferromagnetic matrix comprises a firstferromagnetic matrix (438B) disposed within a first portion of the outerconductor; the outer conductor comprises a second ferromagnetic matrix(438C) disposed within a second portion of the outer conductor oppositethe center conductor; the ferrite matrix is disposed at least betweenthe first and second portions of the outer conductor; and the first andsecond ferromagnetic matrixes are configured to provide the polingfield.
 23. The method of claim 19, wherein: the ferromagnetic matrix isdisposed outside the outer conductor and at least one of above and belowthe ferrite matrix.
 24. The method of claim 19, wherein: thetransmission line comprises a rectangular coaxial transmission line; andthe at least one dielectric comprises an air gap disposed on three offour cross sectional sides of the center conductor.